Exciton localization due to isoelectronic substitution in ZnSTeXU, Z. Y; YANG, X. D; SUN, Z et al.Journal of luminescence. 2007, Vol 122-23, pp 402-404, issn 0022-2313, 3 p.Conference Paper

Temperature dependence of the responsivity of ZnS-based UV detectorsSOU, I. K; MA, Z. H; ZHANG, Z. Q et al.Journal of crystal growth. 2000, Vol 214-15, pp 1125-1129, issn 0022-0248Conference Paper

Molecular beam epitaxial growth and characterization of ZnSTe epilayers and ZnSTe/ZnSe superlattices on Si substratesCHAN, Y. W; WANG, H; SOU, I. K et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 760-764, issn 0022-0248, 2Conference Paper

ZnSTe-based visible-blind UV photovoltaic detectorsSOU, I. K; MAN, C. L; MA, Z. H et al.Journal of crystal growth. 1998, Vol 184-85, pp 1324-1329, issn 0022-0248Conference Paper

Time-resolved absorption studies of the ZnSe/ZnSTe superlatticeWANG, H; SOU, I. K; WONG, G. K. L et al.Superlattices and microstructures. 2001, Vol 29, Num 4, pp 301-307, issn 0749-6036Article

SIMS study of Al thermal diffusion in MBE-grown sandwiched-ZnSTe structuresMA, Z. H; SMITH, T; SOU, I. K et al.Journal of crystal growth. 1999, Vol 201202, pp 470-473, issn 0022-0248Conference Paper